氮化钽

氮化钽
	File:TaNstructure.jpg
	File:TaNstructure2.jpg
别名	Tantalum mononitride [一氮化钽]
识别
CAS号	12033-62-4 check
PubChem	82832
ChemSpider	74745, 10605738
SMILES	N#[Ta];
InChI	1S/N.Ta;
EINECS	234-788-4
性质
化学式	TaN
摩尔质量	194.955 g/mol g·mol⁻¹
外观	black crystals 黑色晶体
密度	14.3 g/cm3
熔点	3090 °C（3363 K）
溶解性（水）	insoluble 不可溶
热导率	1100 W/(m·K) (metallic theta phase)
结构
晶体结构	Hexagonal, hP6
空间群	P62m, No. 189
危险性
闪点	Non-flammable 不可燃
相关物质
其他阳离子	氮化钒; 氮化铌
	若非注明，所有数据均出自标准状态（25 ℃，100 kPa）下。

氮化钽（TaN）是一种化合物，是钽的氮化物。该类化合物存在多种物相，化学计量比范围从Ta₂N到Ta₃N₅，其中包括TaN。

作为薄膜，氮化钽在计算机芯片的后道工序中用作铜互连之间的扩散阻障层和绝缘层。氮化钽也用于制造薄膜电阻。

相图[编辑]

钽-氮体系包含多种状态，包括氮在钽中的固溶体以及数种氮化物相，由于存在晶格空位，其化学计量比可能偏离预期值。^[2]对富氮的“TaN”进行退火处理，可使其转化为TaN和Ta₅N₆的两相混合物。^[2]

Ta₅N₆被认为是热稳定性更高的化合物，但在真空中加热至2500°C时会分解为Ta₂N。^[2]据报道，在真空中发生的分解过程依次为：Ta₃N₅经由Ta₄N₅、Ta₅N₆、ε-TaN，最终转变为Ta₂N。^[3]

θ-TaN的热导率为1100W/mK，约为铜的三倍，是所有金属中热导率最高的。^[4]

制备[编辑]

氮化钽通常制备成薄膜。薄膜沉积方法包括射频磁控反应溅射^[5]^[6]、直流（DC）溅射^[7]、通过在氮气中“燃烧”钽粉实现的自蔓延高温合成（英语：Self-propagating high-temperature synthesis）（SHS）、^[2]低压有机金属化学气相沉积法（LP-MOCVD）^[8]、离子束辅助沉积（IBAD）^[9]，以及利用电子束（英语：Electron-beam physical vapor deposition）蒸发钽并配合高能氮离子的方法^[10]。

沉积薄膜的性质取决于N₂的相对含量：随着氮含量的减少，薄膜可从面心立方（fcc）结构的TaN转变为六方结构的Ta₂N。^[6]据报道，通过沉积还可以获得其他多种物相，包括体心立方（bcc）和六方结构的TaN、六方Ta₅N₆、四方Ta₄N₅、正交Ta₆N_2.5、Ta₄N或Ta₃N₅。^[6]氮化钽薄膜的电学性质随氮比例的不同而异，可从金属导体转变为绝缘体，富氮薄膜的电阻率更高。^[11]

用途[编辑]

在集成电路制造中，氮化钽有时用于在铜或其他导电金属之间构建扩散阻障层或“粘附层”。在后端制程（约20 nm工艺）中，铜表面先涂覆钽，再通过物理气相沉积（PVD）涂覆氮化钽；这种带有阻障层的铜随后通过PVD进一步涂覆铜，并填充电镀铜，最后进行机械加工（研磨/抛光）。^[12]

它也应用于薄膜电阻器。^[5]与镍铬合金电阻相比，氮化钽的优点在于能形成一层耐潮湿的钝化氧化膜。^[13]

参考[编辑]

^ Ghoshal, Abhimanyu. Newly discovered material conducts heat nearly 3x faster than any metal. New Atlas. 2026-01-27 [2026-01-31] （en-US）.
^ ^2.0 ^2.1 ^2.2 ^2.3 Borovinskaya, Inna P. Concise Encyclopedia of Self-Propagating High-Temperature Synthesis - History, Theory, Technology, and Products: 370–371. 2017. ISBN 9780128041734. doi:10.1016/B978-0-12-804173-4.00150-2. |chapter=被忽略 (帮助)
^ Terao, Nobuzo, Structure of Tantalum Nitrides, Japanese Journal of Applied Physics, 1971, 10 (2): 248–259, Bibcode:1971JaJAP..10..248T, S2CID 122356023, doi:10.1143/JJAP.10.248
^ Li, Suixuan; Su, Chuanjin; Qin, Zihao; Alatas, Ahmet; Kunz, Martin; Yamada, Takahiro; Kelly, Shelly D.; Upton, Mary H.; Gironda, Anthony; Zhao, Jiyong; Kalkan, Bora; Yang, Wanli; Aoki, Toshihiro; Hu, Yongjie. Metallic θ-phase tantalum nitride has a thermal conductivity triple that of copper. Science. 12 February 2026, 391 (6786): 707–711. doi:10.1126/science.aeb1142.
^ ^5.0 ^5.1 Akashi, Teruhisa, Fabrication of a Tantalum-Nitride Thin-Film Resistor with a Low-Variability Resistance, IEEJ Transactions on Sensors and Micromachines, 2005, 125 (4): 182–187, Bibcode:2005IJTSM.125..182A, doi:10.1541/ieejsmas.125.182 可免费查阅
^ ^6.0 ^6.1 ^6.2 Zaman, Anna; Meletis, Efstathios I., Microstructure and Mechanical Properties of TaN Thin Films Prepared by Reactive Magnetron Sputtering, Coatings, 23 November 2017, 7 (12): 209, doi:10.3390/coatings7120209 可免费查阅
^ Lima, Lucas; Moreiraa, Milena D.; Cioldin, Fred; Diniza, José Alexandre; Doi, Ioshiaki, Tantalum Nitride as Promising Gate Electrode for MOS Technology, ECS Trans., 2010, 31 (1): 319–325, Bibcode:2010ECSTr..31a.319L, S2CID 97901262, doi:10.1149/1.3474175
^ Tsai, M. H.; Sun, S. C., Metalorganic chemical vapor deposition of tantalum nitride by tertbutylimidotris(diethylamido)tantalum for advanced metallization, Appl. Phys. Lett., 1995, 67 (8): 1128, Bibcode:1995ApPhL..67.1128T, doi:10.1063/1.114983
^ Baba, K.; Hatada, R.; Udoh, K.; Yasuda, K., Structure and properties of NbN and TaN films prepared by ion beam assisted deposition, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2 May 1997,, 127–128: 841–845, Bibcode:1997NIMPB.127..841B, doi:10.1016/S0168-583X(97)00018-9
^ Ensinger, W.; Kiuchi, M.; Satou, M., Low-temperature formation of metastable cubic tantalum nitride by metal condensation under ion irradiation, Journal of Applied Physics, 1995, 77 (12): 6630, Bibcode:1995JAP....77.6630E, doi:10.1063/1.359073
^ Kim, Deok-kee; Lee, Heon; Kim, Donghwan; Kim, Young Keun, Electrical and mechanical properties of tantalum nitride thin films deposited by reactive sputtering, Journal of Crystal Growth, October 2005, 283 (3–4): 404–408, Bibcode:2005JCrGr.283..404K, doi:10.1016/j.jcrysgro.2005.06.017
^ LaPedus, Mark, Challenges Mount For Interconnect, semiengineering.com, 26 June 2012 [2026-03-09], （原始内容存档于2024-12-11）
^ Licari, James J.; Enlow, Leonard R., Hybrid Microcircuit technology Handbook 2nd, Noyes Publications, § 2.5 Characteristics of Tantalum Nitride Resistors, pp.83-4, 1998

[1] Ghoshal, Abhimanyu. Newly discovered material conducts heat nearly 3x faster than any metal. New Atlas. 2026-01-27 [2026-01-31] （en-US）.

[inna-2] 2.0 ^2.1 ^2.2 ^2.3 Borovinskaya, Inna P. Concise Encyclopedia of Self-Propagating High-Temperature Synthesis - History, Theory, Technology, and Products: 370–371. 2017. ISBN 9780128041734. doi:10.1016/B978-0-12-804173-4.00150-2. |chapter=被忽略 (帮助)

[terao-3] Terao, Nobuzo, Structure of Tantalum Nitrides, Japanese Journal of Applied Physics, 1971, 10 (2): 248–259, Bibcode:1971JaJAP..10..248T, S2CID 122356023, doi:10.1143/JJAP.10.248

[4] Li, Suixuan; Su, Chuanjin; Qin, Zihao; Alatas, Ahmet; Kunz, Martin; Yamada, Takahiro; Kelly, Shelly D.; Upton, Mary H.; Gironda, Anthony; Zhao, Jiyong; Kalkan, Bora; Yang, Wanli; Aoki, Toshihiro; Hu, Yongjie. Metallic θ-phase tantalum nitride has a thermal conductivity triple that of copper. Science. 12 February 2026, 391 (6786): 707–711. doi:10.1126/science.aeb1142.

[akashi-5] 5.0 ^5.1 Akashi, Teruhisa, Fabrication of a Tantalum-Nitride Thin-Film Resistor with a Low-Variability Resistance, IEEJ Transactions on Sensors and Micromachines, 2005, 125 (4): 182–187, Bibcode:2005IJTSM.125..182A, doi:10.1541/ieejsmas.125.182 可免费查阅

[zaman-6] 6.0 ^6.1 ^6.2 Zaman, Anna; Meletis, Efstathios I., Microstructure and Mechanical Properties of TaN Thin Films Prepared by Reactive Magnetron Sputtering, Coatings, 23 November 2017, 7 (12): 209, doi:10.3390/coatings7120209 可免费查阅

[lima-7] Lima, Lucas; Moreiraa, Milena D.; Cioldin, Fred; Diniza, José Alexandre; Doi, Ioshiaki, Tantalum Nitride as Promising Gate Electrode for MOS Technology, ECS Trans., 2010, 31 (1): 319–325, Bibcode:2010ECSTr..31a.319L, S2CID 97901262, doi:10.1149/1.3474175

[tsai-8] Tsai, M. H.; Sun, S. C., Metalorganic chemical vapor deposition of tantalum nitride by tertbutylimidotris(diethylamido)tantalum for advanced metallization, Appl. Phys. Lett., 1995, 67 (8): 1128, Bibcode:1995ApPhL..67.1128T, doi:10.1063/1.114983

[baba-9] Baba, K.; Hatada, R.; Udoh, K.; Yasuda, K., Structure and properties of NbN and TaN films prepared by ion beam assisted deposition, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2 May 1997,, 127–128: 841–845, Bibcode:1997NIMPB.127..841B, doi:10.1016/S0168-583X(97)00018-9

[ensinger-10] Ensinger, W.; Kiuchi, M.; Satou, M., Low-temperature formation of metastable cubic tantalum nitride by metal condensation under ion irradiation, Journal of Applied Physics, 1995, 77 (12): 6630, Bibcode:1995JAP....77.6630E, doi:10.1063/1.359073

[kim-11] Kim, Deok-kee; Lee, Heon; Kim, Donghwan; Kim, Young Keun, Electrical and mechanical properties of tantalum nitride thin films deposited by reactive sputtering, Journal of Crystal Growth, October 2005, 283 (3–4): 404–408, Bibcode:2005JCrGr.283..404K, doi:10.1016/j.jcrysgro.2005.06.017

[12] LaPedus, Mark, Challenges Mount For Interconnect, semiengineering.com, 26 June 2012 [2026-03-09], （原始内容存档于2024-12-11）

[13] Licari, James J.; Enlow, Leonard R., Hybrid Microcircuit technology Handbook 2nd, Noyes Publications, § 2.5 Characteristics of Tantalum Nitride Resistors, pp.83-4, 1998

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氮化钽

目录

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氮化钽

相图[编辑]

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参考[编辑]

导航菜单

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